absolute maximum ratings thermal and mechanical characteristics symbol parameter min typ max unit p d total power dissipation t c = @ 25c - - 250 w r jc junction to case thermal resistance igbt - - 0.50 c/w diode 1.0 r cs case to sink thermal resistance, flat greased surface - 0.11 - t j , t stg operating and storage junction temperature range -55 - 150 c t l soldering temperature for 10 seconds (1.6mm from case) - - 300 w t package weight - 0.22 - oz - 5.9 - g symbol parameter rating unit i c1 continuous collector current t c = @ 25c 54 a i c2 continuous collector current t c = @ 100c 30 i cm pulsed collector current 1 113 v ge gate-emitter voltage 30v v ssoa switching safe operating area 113 t sc short circut withstand time 3 10 s single die igbt with separate dl typical applications zvs phase shifted bridge resonant mode switching phase shifted bridge welding induction heating high frequency smps features fast switching with low emi very low e off for maximum ef? ciency short circuit rated low gate charge rohs compliant tight parameter distribution easy paralleling low forward diode voltage (vf) ultrasoft recovery diode the thunderbolt hs ? igbt used in this resonant mode combi is based on thin wafer non-punch through (npt) technology similar to the thunderbolt ? series, but trades higher v ce(on) for signi ? cantly lower turn-on energy e off . the low switching losses enable operation at switching frequencies over 100khz, approaching power mosfet performance but lower cost. an extremely tight parameter distribution combined with a positive v ce(on) temperature coef ? cient make it easy to parallel thunderbolts hs ? igbt's. controlled slew rates result in very good noise and oscillation immunity and low emi. the short circuit duration rating of 10 s make these igbt's suitable for motor drive and inverter applications. reliability is further enhanced by avalanche energy ruggedness. combi versions are packaged with a high speed, soft recovery dl series diode. resonant mode combi igbt ? to-247 apt30gs60brdl(g) 600v, 30a, v ce(on) = 2.8v typical g c e g c e 052-6353 rev c 3-2012 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. microsemi website - http://www.microsemi.com downloaded from: http:///
symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 250a 600 - - v v br(ces) /t j breakdown voltage temperature coef reference to 25c, i c = 250a - 0.60 - v/c v ce(on) collector-emitter on voltage 4 v ge = 15v i c = 30a t j = 25c - 2.8 3.15 v t j = 125c - 3.25 - v ge(th) gate-emitter threshold voltage v ge = v ce , i c = 1ma 345 v ge(th) /t j threshold voltage temp coef - 6.7 - mv/c i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c --5 0 a t j = 125c - - 1000 i ges gate-emitter leakage current v ge = 20v - - 100 na symbol parameter test conditions min typ max unit g fs forward transconductance v ce = 50v, i c = 30a -1 8- s c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz - 1600 - pf c oes output capacitance - 140 - c res reverse transfer capacitance - 90 - c o(cr) reverse transfer capacitance charge related 5 v ge = 0v v ce = 0 to 400v - 130 - c o(er) reverse transfer capacitance current related 6 95 q g total gate charge v ge = 0 to 15v i c = 30a, v ce = 300v - 145 - nc q ge gate-emitter charge - 12 - g gc gate-collector charge - 65 - t d(on) turn-on delay time inductive switching igbt and diode: t j = 25c, v cc = 400v, i c = 30a r g = 9.1 7 , v gg = 15v -1 6- ns t r rise time - 29 - t d(of ) turn-of delay time - 360 - t f fall time - 27 - e on1 turn-on switching energy 8 - tbd - j e on2 turn-on switching energy 9 - 800 - e of turn-of switching energy 10 - 570 - t d(on) turn-on delay time inductive switching igbt and diode: t j = 125c, v cc = 400v, i c = 30a r g = 9.1 7 , v gg = 15v -1 6- ns t r rise time - 29 - t d(of ) turn-of delay time - 390 - t f fall time - 22 - e on1 turn-on switching energy 8 - tbd - j e on2 turn-on switching energy 9 - 1185 - e of turn-of switching energy 10 - 695 - static characteristics t j = 25c unless otherwise specii ed dynamic characteristics t j = 25c unless otherwise specii ed apt30gs60brdl(g) 052-6353 rev c 3-2012 downloaded from: http:///
v ce(on) , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics figure 2, output characteristics v ge , gate-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics figure 4, on state voltage vs gate-to- emitter voltage t j , junction temperature (c) gate charge (nc) figure 5, on state voltage vs junction temperature figure 6, gate charge v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 7, capacitance vs collector-to-emitter voltage figure 8, dc collector current vs case temperature c, capacitance ( p f) v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) i c, dc collector current(a) v ge , gate-to-emitter voltage (v) v ce , collector-to-emitter voltage (v) i c , collector current (a) 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 6 8 10 12 14 16 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 25 50 75 100 125 150 120100 8060 40 20 0 120100 8060 40 20 05 4 3 2 1 0 20001000 100 10 120100 8060 40 20 06 5 4 3 2 1 0 1614 12 10 86 4 2 0 6050 40 30 20 10 0 250s pulse test<0.5 % duty cycle v ce = 480v v ce = 300v v ce = 120v 250s pulse test<0.5 % duty cycle 12v 10v 9v 8v 11v 6v t j = 125c t j = 25c i c = 15a i c = 30a i c = 60a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 100a i c = 50a i c = 25a v ge = 15v t j = 125c t j = 25c t j = 150c t j = 125c t j = 25c. 250s pulse test <0.5 % duty cycle c oes c ies c res v ge = 13 & 15v t j = -55c i c = 60a i c = 30a i c = 15a t j = 25c. 250s pulse test <0.5 % duty cycle typical performance curves apt30gs60brdl(g) 052-6353 rev c 3-2012 downloaded from: http:///
i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-of delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn of energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature switching energy losses (mj) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (mj) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 0 25 50 75 100 125 2520 15 10 50 7060 50 40 30 20 10 0 40003000 2000 1000 05 4 3 2 1 0 500400 300 200 100 0 6050 40 30 20 10 0 16001400 1200 1000 800600 400 200 04 3 2 1 0 r g = 9.1, l = 100h, v ce = 400v v ce = 400v t j = 25c , t j =125c r g = 9.1 l = 100h v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v v ce = 400v v ge = +15v r g = 9.1 t j = 125c, v ge = 15v t j = 25c, v ge = 15v v ce = 400v v ge = +15v r g = 9.1 e on2, 60a e of , 60a e of , 30a e on2 , 30a e on2 , 15a e of , 15a r g = 9.1, l = 100h, v ce = 400v v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 9.1 l = 100h v ce = 400v v ge = +15v r g = 9.1 t j = 125c,v ge = 15v t j = 25c,v ge = 15v e on2, 60a e of , 60a e on2, 30a e of , 30a e on2 , 15a e of , 15a v ce = 400v v ge = +15v t j = 125c typical performance curves apt30gs60brdl(g) 052-6353 rev c 3-2012 downloaded from: http:///
0.0838 0.207 0.209 0.00245 0.00548 0.165 dissipated powe r (watts ) t j (c ) t c (c) z ext are the external therma l impedances: case to sink,sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext rectangular pulse duration (seconds) figure 19, maximum ef ective transient thermal impedance, junction-to-case vs pulse duration figure 20, transient thermal impedance model i c , collector current (a) figure 21, operating frequency vs collector current z jc , thermal impedance (c/w) f max , operating frequency (khz) v ce , collector-to-emitter voltage (v) v ce , collector-to-emitter voltage (v) figure 17, forward safe operating area figure 18, maximum forward safe operating area i c , collector current (a) i c , collector current (a) 1 10 100 800 1 10 100 800 0 10 20 30 40 50 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 0.600.50 0.40 0.30 0.20 0.10 0 200100 10 1 0.1 200100 10 1 0.1 120 10 1 scaling for dif erent case & junction temperatures: i c = i c(t c = 25 c) *( t j - t c )/125 t j = 150c t c = 25c 1ms 100ms v ce (on) dc line 100s i cm 10ms 13s t j = 125c t c = 75c 1ms 100ms v ce (on) dc line 100s i cm 10ms 13s peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 9.1 0.3 0.9 0.7 single pulse 0.5 0.1 0.05 t c = 100 c t c = 75 c f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 apt30gs60brdl(g) 052-6353 rev c 3-2012 typical performance curves downloaded from: http:///
i c a d.u.t. v ce v cc figure 24, turn-of switching waveforms and dei nitions figure 23, turn-on switching waveforms and dei nitions figure 22, inductive switching test circuit t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(of ) 10% t f 90% apt30dl60 foot note: 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 3 short circuit time: v ge = 15v, v cc 600v, t j 150c 4 pulse test: pulse width < 380s, duty cycle < 2% 5 c o(cr) is dei ned as a i xed capacitance with the same stored charge as c oes with v ce = 67% of v (br)ces . 6 c o(er) is dei ned as a i xed capacitance with the same stored energy as c oes with v ce = 67% of v (br)ces . to calculate c o(er) for any value of v ce less than v (br)ces , use this equation: c o(er) = -1.40e-7/v ds ^2 + 1.47e-8/v ds + 5.95e-11. 7 r g is external gate resistance, not including internal gate resistance or gate driver impedance (mic4452). 8 e on1 is the inductive turn-on energy of the igbt only, without the ef ect of a commutating diode reverse recovery current adding to the igbt turn-on switching loss. it is measured by clamping the inductance with a silicon carbide schottky diode. 9 e on2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on energy. 10 eof is the clamped inductive turn-of energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the specii cations and information contained herein. apt30gs60brdl(g) 052-6353 rev c 3-2012 downloaded from: http:///
characteristic / test conditions maximum average forward current (t c = 126c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 30a forward voltage i f = 60a i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.25 1.6 2.0 1.25 apt30gs60brdl(g) 3051 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 64 - 317 - 962 - 7 - - 561 - 2244 - 9 - - 264 - 3191 - 26 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f =30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c dynamic characteristics rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: z jc , thermal impedance (c/w) figure 1b, transient thermal impedance model dissipated powe r (watts ) t j (c) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext .112 .437 .450 .0005 .0016 0.263 apt30gs60brdl(g) 052-6353 rev c 3-2012 downloaded from: http:///
case temperature (c) figure 7, maximum average forward current vs. case temperature 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 24 28 32 0 200 400 600 800 1000 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 200 400 600 800 1000 duty cycle = 0.5 t j = 126c i rrm q rr t rr 60a 30a 60a 30a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) i f(av) (a) 0 50 100 150 200 250 300 1 10 100 400 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 400v t j = 125c v r = 400v -di f /dt, current rate of change (a/ s ) figure 4, reverse recovery charge vs. current rate of change -di f /dt, current rate of change (a/ s ) figure 5, reverse recovery current vs. current rate of change t j = 125c v r = 400v 30a 15a 15a 15a 60a apt30gs60brdl(g) typical performance curves 052-6353 rev c 3-2012 downloaded from: http:///
4 3 1 2 5 5 zer o 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - revers e r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 9. diode test circui t figure 10, diode reverse recovery waveform and definition s 0.25 i rrm current transformer di f /dt adjus t d.u.t. +18v 0v t rr / q rr wavefor m slope = di m / dt 6 di m /dt - maximum rate of current increase during the trailing portion of t rr. 6 v r to-247 (b) package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. collector (cathode) emitter (anode) collector (cathode) 052-6353 rev c 3-2012 downloaded from: http:///
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